characteri s tic symbol fr501 fr502 fr503 FR504 fr505 fr506 fr507 unit fr501 ? fr507 5.0 a fast recovery diode feat ures ! diff us ed junction ! low forward voltage drop ! high current capability a b a ! high reliability ! high surge current capability m e chanical data ! c ase: r-6, molded plastic d ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 2.1 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version m aximum r atings and electrical characteristics @t a =2 5 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r 50 100 200 400 600 800 1000 v rm s reverse voltage v r( rm s) 35 70 140 280 420 560 700 v a verage rectified output current (note 1) @t a = 55c i o 5. 0 a non-repet itive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m 300 a forward v oltage @i f = 5 .0a v fm 1. 2 v p eak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100 c i rm 10 200 a revers e recovery time (note 2) t rr 150 250 500 ns t ypical junction capacitance (note 3) c j 100 pf operat i ng temperature range t j -65 t o +150 c s t orage temperature range t st g -65 t o +150 c not e: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case 2. measured with if = 0.5a, ir = 1.0a, irr = 0.25a. see figure 5. 3. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 1 of 2 fr501 ? fr507 z ibo seno electronic engineering co., ltd. www.senocn.com c do-201 a d di m min max a 25. 4 ? b 8. 50 9.50 c 1.20 1.30 d 5. 0 5.60 a ll d imensions in mm do-201 a d di m min max a 24. 5 ? b 7. 20 9.50 c 1.10 1.30 d 5. 00 5.60 a ll d imensions in mm a l l d a t a s h e e t
0 2 4 6 8 0 25 50 75 100 125 150 175 i , average forward current (a v) t , ambient temperature ( c) fig. 1, typical forward current derating curve a 0.1 1 10 100 1000 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fig. 3, typical instantaneous forward characteristics f t = 25 c pulse width = 300 s 1% duty cycle j m 0 100 1 50 200 250 300 350 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 2 max non-repetitive peak surge current 8.3ms single half sine-wave jedec method 1.0 10 100 1000 1.0 10 100 c , capacitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25 c f = 1.0mhz j 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under t est t rr settimebasefor5 /10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 2 of 2 fr501 ? fr507 fr501 ? fr507 z ibo seno electronic engineering co., ltd. www.senocn.com a l l d a t a s h e e t
|
